 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| process CPS110 silicon controlled rectifier 12 amp sensitive gate scr chip princip al device types cs220-12m series csdd-12m series process glass passivated mesa die size 110 x 110 mils die thickness 8.7 mils cathode bonding pad area 80 x 40 mils gate bonding pad area 31 x 31 mils top side metalization al - 45,000? back side metalization al/mo/ni/ag - 32,000? process details 145 adams avenue hauppauge, ny 11788 usa tel: (631) 435-1110 fax: (631) 435-1824 www.centralsemi.com geometry r0 (4- january 2006) gross dier per 4 inch w afer 876
|
Price & Availability of CPS110
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |